검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Improved performance of mid-infrared superlattice light emitting diodes grown epitaxially on silicon Muhowski AJ, Bogh CL, Heise RL, Boggess TF, Prineas JP Journal of Crystal Growth, 507, 46, 2019 |
| 2 |
Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlattices Murray LM, Lokovic KS, Olson BV, Yildirim A, Boggess TF, Prineas JP Journal of Crystal Growth, 386, 194, 2014 |
| 3 |
Optimization of MBE-grown GaSb buffer layers and surface effects of antimony stabilization flux Koerperick EJ, Murray LM, Norton DT, Boggess TF, Prineas JP Journal of Crystal Growth, 312(2), 185, 2010 |
| 4 |
GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 mu m device applications Calvez S, Hopkins JM, Smith SA, Clark AH, Macaluso R, Sun HD, Dawson MD, Jouhti T, Pessa M, Gundogdu K, Hall KC, Boggess TF Journal of Crystal Growth, 268(3-4), 457, 2004 |
| 5 |
Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes Hasenberg TC, Day PS, Shaw EM, Magarreli DJ, Olesberg JT, Yu C, Boggess TF, Flatte ME Journal of Vacuum Science & Technology B, 18(3), 1623, 2000 |
| 6 |
Picosecond Investigations of the Excited-State Transition at 532 nm in Kings Complex ((C5H5)Fe(Co))4 and Synthesized Analogs Allan GR, Rychnovsky SJ, Venzke CH, Boggess TF, Tutt L Journal of Physical Chemistry, 98(1), 216, 1994 |