화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Thermal stability of thin InGaN films on GaN
Thaler GT, Koleske DD, Lee SR, Bogart KHA, Crawford MH
Journal of Crystal Growth, 312(11), 1817, 2010
2 Dislocation reduction in AlGaN grown on patterned GaN
Follstaedt DM, Allerman AA, Lee SR, Michael JR, Bogart KHA, Crawford MH, Missert NA
Journal of Crystal Growth, 310(4), 766, 2008
3 Investigation of surface treatment schemes on n-type GaN and Al0.20Ga0.80N
Selvanathan D, Mohammed FM, Bae JO, Adesida I, Bogart KHA
Journal of Vacuum Science & Technology B, 23(6), 2538, 2005
4 Growth and design of deep-UV (240-290 nm) light emitting diodes using AlGaN alloys
Allerman AA, Crawford MH, Fischer AJ, Bogart KHA, Lee SR, Follstaedt DM, Provencio PP, Koleske DD
Journal of Crystal Growth, 272(1-4), 227, 2004
5 Feature evolution during plasma etching. II. Polycrystalline silicon etching
Lane JM, Klemens FP, Bogart KHA, Malyshev MV, Lee JTC
Journal of Vacuum Science & Technology A, 18(1), 188, 2000
6 Mask charging and profile evolution during chlorine plasma etching of silicon
Bogart KHA, Klemens FP, Malyshev MV, Colonell JI, Donnelly VM, Lee JTC, Lane JM
Journal of Vacuum Science & Technology A, 18(1), 197, 2000
7 The role of feedgas chemistry, mask material, and processing parameters in profile evolution during plasma etching of Si(100)
Lane JM, Bogart KHA, Klemens FP, Lee JTC
Journal of Vacuum Science & Technology A, 18(5), 2067, 2000
8 Reduction of plasma induced damage in an inductively coupled plasma using pulsed source power
Samukawa S, Noguchi K, Colonell JI, Bogart KHA, Malyshev MV, Donnelly VM
Journal of Vacuum Science & Technology B, 18(2), 834, 2000
9 Deposition of SiO2 films from novel alkoxysilane/O-2 plasmas
Bogart KHA, Ramirez SK, Gonzales LA, Bogart GR, Fisher ER
Journal of Vacuum Science & Technology A, 16(6), 3175, 1998