검색결과 : 26건
| No. | Article |
|---|---|
| 1 |
High sensitivity pH sensing on the BEOL of industrial FDSOI transistors Rahhal L, Ayele GT, Monfray S, Cloarec JP, Fornacciari B, Pardoux E, Chevalier C, Ecoffey S, Drouin D, Morin P, Garnier P, Boeuf F, Souifi A Solid-State Electronics, 134, 22, 2017 |
| 2 |
Coupling of a bimetallic strip heat engine with a piezoelectric transducer for thermal energy harvesting Boughaleb J, Arnaud A, Monfray S, Cottinet PJ, Quenard S, Boeuf F, Guyomar D, Skotnicki T Molecular Crystals and Liquid Crystals, 628(1), 15, 2016 |
| 3 |
Compact model of short-channel effects for FDSOI devices including the influence of back-bias and fringing fields for Si and III-V technology Hiblot G, Lacord J, Akbal M, Rafhay Q, Boeuf F, Ghibaudo G Solid-State Electronics, 107, 1, 2015 |
| 4 |
Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials Hiblot G, Rafhay Q, Boeuf F, Ghibaudo G Solid-State Electronics, 111, 188, 2015 |
| 5 |
MASTAR VA: A predictive and flexible compact model for digital performances evaluation of CMOS technology with conventional CAD tools Lacord J, Ghibaudo G, Boeuf F Solid-State Electronics, 91, 137, 2014 |
| 6 |
Compact modeling of the shift between classical and quantum threshold voltages in a III-V nanowire Hiblot G, Rathay Q, Boeuf F, Ghibaudo G Solid-State Electronics, 100, 71, 2014 |
| 7 |
New parameter extraction method based on split C-V measurements in FDSOI MOSFETs Ben Akkez I, Cros A, Fenouillet-Beranger C, Boeuf F, Rafhay Q, Balestra F, Ghibaudo G Solid-State Electronics, 84, 142, 2013 |
| 8 |
Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology Fenouillet-Beranger C, Perreau P, Benoist T, Richier C, Haendler S, Pradelle J, Bustos J, Brun P, Tosti L, Weber O, Andrieu F, Orlando B, Pellissier-Tanon D, Abbate F, Richard C, Beneyton R, Gregoire M, Ducote J, Gouraud P, Margain A, Borowiak C, Bianchini R, Planes N, Gourvest E, Bourdelle KK, Nguyen BY, Poiroux T, Skotnicki T, Faynot O, Boeuf F Solid-State Electronics, 88, 15, 2013 |
| 9 |
Scaling of high-kappa/metal-gate TriGate SOI nanowire transistors down to 10 nm width Coquand R, Barraud S, Casse M, Leroux P, Vizioz C, Comboroure C, Perreau P, Ernst E, Samson MP, Maffini-Alvaro V, Tabone C, Barnola S, Munteanu D, Ghibaudo G, Monfray S, Boeuf F, Poiroux T Solid-State Electronics, 88, 32, 2013 |
| 10 |
Impact of quantum effects on the short channel effects of III-V nMOSFETs in weak and strong inversion regimes Dutta T, Rafhay Q, Clerc R, Lacord J, Monfray S, Pananakakis G, Boeuf F, Ghibaudo G Solid-State Electronics, 88, 43, 2013 |