검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Parasitic bipolar impact in 32 nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technology Fenouillet-Beranger C, Perreau P, Boulenc P, Tosti L, Barnola S, Andrieu F, Weber O, Beneyton R, Perrot C, de Buttet C, Abbate F, Campidelli Y, Pinzelli L, Gouraud P, Margain A, Peru S, Bourdelle KK, Nguyen BY, Boedt F, Poiroux T, Faynot O, Skotnicki T, Boeuf F Solid-State Electronics, 74, 32, 2012 |
| 2 |
Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below Fenouillet-Beranger C, Perreau P, Denorme S, Tosti L, Andrieu F, Weber O, Monfray S, Barnola S, Arvet C, Campidelli Y, Haendler S, Beneyton R, Perrot C, de Buttet C, Gros P, Pham-Nguyen L, Leverd F, Gouraud P, Abbate F, Baron F, Torres A, Laviron C, Pinzelli L, Vetier J, Borowiak C, Margain A, Delprat D, Boedt F, Bourdelle K, Nguyen BY, Faynot O, Skotnicki T Solid-State Electronics, 54(9), 849, 2010 |