화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Performance and reliability of HfAlOx-based interpoly dielectrics for floating-gate Flash memory
Govoreanu B, Wellekens D, Haspeslagh L, Brunco DP, De Vos J, Aguado DR, Blomme P, van der Zanden K, Van Houdt J
Solid-State Electronics, 52(4), 557, 2008
2 An effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers
Govoreanu B, Blomme P, Henson K, Van Houdt J, De Meyer K
Solid-State Electronics, 48(4), 617, 2004
3 A model for tunneling current in multi-layer tunnel dielectrics
Govoreanu B, Blomme P, Rosmeulen M, Van Houdt J, De Meyer K
Solid-State Electronics, 47(6), 1045, 2003