화학공학소재연구정보센터
검색결과 : 13건
No. Article
1 Plasma etching of Hf-based high-k thin films. Part II. Ion-enhanced surface reaction mechanisms
Martin RM, Blom HO, Chang JP
Journal of Vacuum Science & Technology A, 27(2), 217, 2009
2 Generation of Oxide Nanopatterns by Combining Self-Assembly of S-Layer Proteins and Area-Selective Atomic Layer Deposition
Liu JR, Mao YB, Lan E, Banatao DR, Forse GJ, Lu J, Blom HO, Yeates TO, Dunn B, Chang JP
Journal of the American Chemical Society, 130(50), 16908, 2008
3 Investigation of fabrication uniformity and emission reliability of silicon field emitters for use in space
Wang L, Aplin KL, Huq SE, Kent BJ, Stevens R, Malik A, Blom HO, Loader IM, Thomas GR
Journal of Vacuum Science & Technology B, 24(2), 1072, 2006
4 Simulation and dielectric characterization of reactive dc magnetron cosputtered (Ta2O5)(1-x)(TiO2)(x) thin films
Westlinder J, Zhang Y, Engelmark F, Possnert G, Blom HO, Olsson J, Berg S
Journal of Vacuum Science & Technology B, 20(3), 855, 2002
5 Patterning of tantalum pentoxide, a high epsilon material, by inductively coupled plasma etching
Jonsson LB, Westlinder J, Engelmark F, Hedlund C, Du J, Smith U, Blom HO
Journal of Vacuum Science & Technology B, 18(4), 1906, 2000
6 Computer modeling as a tool to predict deposition rate and film composition in the reactive sputtering process
Berg S, Nyberg T, Blom HO, Nender C
Journal of Vacuum Science & Technology A, 16(3), 1277, 1998
7 Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas : Angular dependence of SiO2 and Si3N4 etching rates
Schaepkens M, Oehrlein GS, Hedlund C, Jonsson LB, Blom HO
Journal of Vacuum Science & Technology A, 16(6), 3281, 1998
8 Angular-Dependence of the Polysilicon Etch Rate During Dry-Etching in SF6 and Cl-2
Hedlund C, Jonsson LB, Katardjiev IV, Berg S, Blom HO
Journal of Vacuum Science & Technology A, 15(3), 686, 1997
9 Discharge Disruptions in a Helicon Plasma Source
Shamrai KP, Virko VF, Blom HO, Pavlenko VP, Taranov VB, Jonsson LB, Hedlund C, Berg S
Journal of Vacuum Science & Technology A, 15(6), 2864, 1997
10 Method for the Determination of the Angular-Dependence During Dry-Etching
Hedlund C, Strandman C, Katardjiev IV, Backlund Y, Berg S, Blom HO
Journal of Vacuum Science & Technology B, 14(5), 3239, 1996