화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 SiO2 thickness determination by x-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry
Cole DA, Shallenberger JR, Novak SW, Moore RL, Edgell MJ, Smith SP, Hitzman CJ, Kirchhoff JF, Principe E, Nieveen W, Huang FK, Biswas S, Bleiler RJ, Jones K
Journal of Vacuum Science & Technology B, 18(1), 440, 2000
2 Long-Term Reproducibility of Secondary-Ion Mass-Spectroscopy Measurements in Silicon
Chu PK, Smith SP, Bleiler RJ
Journal of Vacuum Science & Technology B, 14(5), 3321, 1996
3 Determination of Sub-Parts per Billion Boron Contamination in N+ Czochralski Silicon Substrates by SIMS
Chu PK, Bleiler RJ, Metz JM
Journal of the Electrochemical Society, 141(12), 3453, 1994