검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology Menk LA, Josell D, Moffat TP, Baca E, Blain MG, Smith A, Dominguez J, McClain J, Yeh PD, Hollowell AE Journal of the Electrochemical Society, 166(1), D3066, 2018 |
| 2 |
Galvanostatic Plating with a Single Additive Electrolyte for Bottom-Up Filling of Copper in Mesoscale TSVs Menk LA, Baca E, Blain MG, McClain J, Dominguez J, Smith A, Hollowell AE Journal of the Electrochemical Society, 166(1), D3226, 2018 |
| 3 |
Chemical downstream etching of tungsten (vol A16, pg 2115, 1998) Blain MG, Jarecki RL, Simonson RJ Journal of Vacuum Science & Technology A, 17(1), 323, 1999 |
| 4 |
Mechanism of nitrogen removal from silicon nitride by nitric oxide Blain MG Journal of Vacuum Science & Technology A, 17(2), 665, 1999 |
| 5 |
Surface dependent electron and negative ion density in inductively coupled discharges Hebner GA, Blain MG, Hamilton TW, Nichols CA, Jarecki RL Journal of Vacuum Science & Technology A, 17(6), 3172, 1999 |
| 6 |
Absolute intensities of the vacuum ultraviolet spectra in a metal-etch plasma processing discharge Woodworth JR, Blain MG, Jarecki RL, Hamilton TW, Aragon BP Journal of Vacuum Science & Technology A, 17(6), 3209, 1999 |
| 7 |
Influence of surface material on the boron chloride density in inductively coupled discharges Hebner GA, Blain MG, Hamilton TW Journal of Vacuum Science & Technology A, 17(6), 3218, 1999 |
| 8 |
Chemical downstream etching of tungsten Blain MG, Jarecki RL, Simonson RJ Journal of Vacuum Science & Technology A, 16(4), 2115, 1998 |
| 9 |
Role of Nitrogen in the Downstream Etching of Silicon-Nitride Blain MG, Meisenheimer TL, Stevens JE Journal of Vacuum Science & Technology A, 14(4), 2151, 1996 |
| 10 |
In-Situ Wafer Temperature Monitoring of Silicon Etching Using Diffuse-Reflectance Spectroscopy Booth JL, Beard BT, Stevens JE, Blain MG, Meisenheimer TL Journal of Vacuum Science & Technology A, 14(4), 2356, 1996 |