검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Impact of growth conditions on AlN/GaN heterostructures with in-situ SiN capping layer Kanyandekwe J, Baines Y, Richy J, Favier S, Leroux C, Blachier D, Mazel Y, Veillerot M, Barnes JP, Mrad M, Wiese C, Charles M Journal of Crystal Growth, 515, 48, 2019 |
| 2 |
Carbon-doped GeTe: A promising material for Phase-Change Memories Beneventi GB, Perniola L, Sousa V, Gourvest E, Maitrejean S, Bastien JC, Bastard A, Hyot B, Fargeix A, Jahan C, Nodin JF, Persico A, Fantini A, Blachier D, Toffoli A, Loubriat S, Roule A, Lhostis S, Feldis H, Reimbold G, Billon T, De Salvo B, Larcher L, Pavan P, Bensahel D, Mazoyer P, Annunziata R, Zuliani P, Boulanger F Solid-State Electronics, 65-66, 197, 2011 |
| 3 |
Experimental evidence and extraction of the electron mass variation in [110] uniaxially strained MOSFETs Rochette F, Casse M, Mouis M, Reimbold G, Blachier D, Leroux C, Guillaumot B, Boulanger F Solid-State Electronics, 51(11-12), 1458, 2007 |
| 4 |
Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures Marchand B, Cretu B, Ghibaudo G, Balestra F, Blachier D, Leroux C, Deleonibus S, Guegan G, Reimbold G, Kubicek S, DeMeyer K Solid-State Electronics, 46(3), 337, 2002 |