검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Study of Ion Mixing During Auger Depth Profiling of Ge-Si Multilayer System .2. Low Ion Energy (0.2-2 keV) Range Menyhard M, Barna A, Biersack JP, Jarrendahl K, Sundgren JE Journal of Vacuum Science & Technology A, 13(4), 1999, 1995 |
| 2 |
Study of Ion Mixing During Auger-Electron Spectroscopy Death Profiling of Ge-Si Multilayer System Menyhard M, Barna A, Biersack JP Journal of Vacuum Science & Technology A, 12(4), 2368, 1994 |