화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Thin films of HfO2 for high-k gate oxide applications from engineered alkoxide- and amide-based MOCVD precursors
Thomas R, Rije E, Ehrhart P, Milanov A, Bhakta R, Bauneman A, Devi A, Fischer R, Waser R
Journal of the Electrochemical Society, 154(3), G77, 2007
2 Guanidinate-stabilized monomeric hafnium amide complexes as promising precursors for MOCVD of HfO2
Milanov A, Bhakta R, Baunemann A, Becker HW, Thomas R, Ehrhart P, Winter M, Devi A
Inorganic Chemistry, 45(26), 11008, 2006