검색결과 : 6건
No. | Article |
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1 |
Evaluation of oxalyl fluoride for a dielectric etch application in an inductively coupled plasma etch tool Karecki S, Chatterjee R, Pruette L, Reif R, Sparks T, Beu L, Vartanian V, Novoselov M Journal of the Electrochemical Society, 148(3), G141, 2001 |
2 |
Characterization of iodoheptafluoropropane as a dielectric etchant. I. Process performance evaluation Karecki S, Chatterjee R, Pruette L, Reif R, Vartanian V, Sparks T, Beu L, Novoselov K Journal of Vacuum Science & Technology B, 19(4), 1269, 2001 |
3 |
Characterization of iodoheptafluoropropane as a dielectric etchant. II. Wafer surface analysis Karecki S, Chatterjee R, Pruette L, Reif R, Vartanian V, Sparks T, Lee JJ, Beu L, Miller C Journal of Vacuum Science & Technology B, 19(4), 1293, 2001 |
4 |
Characterization of iodoheptafluoropropane as a dielectric etchant. III. Effluent analysis Karecki S, Chatterjee R, Pruette L, Reif R, Vartanian V, Sparks T, Beu L Journal of Vacuum Science & Technology B, 19(4), 1306, 2001 |
5 |
Inductively coupled, point-of-use plasma abatement of perfluorinated compounds and hydrofluorinated compounds from etch processes utilizing O-2 and H2O as additive gases Tonnis EJ, Graves DB, Vartanian VH, Beu L, Lii T, Jewett R Journal of Vacuum Science & Technology A, 18(2), 393, 2000 |
6 |
Use of 2H-heptafluoropropane, 1-iodoheptafluoropropane, and 2-iodoheptafluoropropane for a high aspect ratio via etch in a high density plasma etch tool Karecki S, Pruette L, Reif R, Beu L, Sparks T, Vartanian V Journal of Vacuum Science & Technology A, 16(4), 2722, 1998 |