화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Evaluation of oxalyl fluoride for a dielectric etch application in an inductively coupled plasma etch tool
Karecki S, Chatterjee R, Pruette L, Reif R, Sparks T, Beu L, Vartanian V, Novoselov M
Journal of the Electrochemical Society, 148(3), G141, 2001
2 Characterization of iodoheptafluoropropane as a dielectric etchant. I. Process performance evaluation
Karecki S, Chatterjee R, Pruette L, Reif R, Vartanian V, Sparks T, Beu L, Novoselov K
Journal of Vacuum Science & Technology B, 19(4), 1269, 2001
3 Characterization of iodoheptafluoropropane as a dielectric etchant. II. Wafer surface analysis
Karecki S, Chatterjee R, Pruette L, Reif R, Vartanian V, Sparks T, Lee JJ, Beu L, Miller C
Journal of Vacuum Science & Technology B, 19(4), 1293, 2001
4 Characterization of iodoheptafluoropropane as a dielectric etchant. III. Effluent analysis
Karecki S, Chatterjee R, Pruette L, Reif R, Vartanian V, Sparks T, Beu L
Journal of Vacuum Science & Technology B, 19(4), 1306, 2001
5 Inductively coupled, point-of-use plasma abatement of perfluorinated compounds and hydrofluorinated compounds from etch processes utilizing O-2 and H2O as additive gases
Tonnis EJ, Graves DB, Vartanian VH, Beu L, Lii T, Jewett R
Journal of Vacuum Science & Technology A, 18(2), 393, 2000
6 Use of 2H-heptafluoropropane, 1-iodoheptafluoropropane, and 2-iodoheptafluoropropane for a high aspect ratio via etch in a high density plasma etch tool
Karecki S, Pruette L, Reif R, Beu L, Sparks T, Vartanian V
Journal of Vacuum Science & Technology A, 16(4), 2722, 1998