검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy Bertness KA, Sanders AW, Rourke DM, Harvey TE, Roshko A, Schlager JB, Sanford NA Advanced Functional Materials, 20(17), 2911, 2010 |
| 2 |
GaN Nanowire Functionalized with Atomic Layer Deposition Techniques for Enhanced Immobilization of Biomolecules Guo DJ, Abdulagatov AI, Rourke DM, Bertness KA, George SM, Lee YC, Tan W Langmuir, 26(23), 18382, 2010 |
| 3 |
Topography of epitaxial GaAs surfaces for growth Lehman SY, Roshko A, Mirin RP, Bertness KA, Harvey TE, Cobry KD Journal of Vacuum Science & Technology B, 27(3), 1072, 2009 |
| 4 |
Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy Bertness KA, Roshko A, Mansfield LM, Harvey TE, Sanford NA Journal of Crystal Growth, 310(13), 3154, 2008 |
| 5 |
Nucleation conditions for catalyst-free GaN nanowires Bertness KA, Roshko A, Mansfield LM, Harvey TE, Sanford NA Journal of Crystal Growth, 300(1), 94, 2007 |
| 6 |
Spontaneously grown GaN and AlGaN nanowires Bertness KA, Roshko A, Sanford NA, Barker JM, Davydov A Journal of Crystal Growth, 287(2), 522, 2006 |
| 7 |
High-accuracy determination of epitaxial AlGaAs composition with inductively coupled plasma optical emission spectroscopy Bertness KA, Wang CM, Salit ML, Turk GC, Butler TA, Paul AJ, Robins LH Journal of Vacuum Science & Technology B, 24(2), 762, 2006 |
| 8 |
GaAs buffer layer morphology and lateral distributions of InGaAs quantum dots Roshko A, Harvey TE, Lehman SY, Mirin RR, Bertness KA, Hyland BL Journal of Vacuum Science & Technology B, 23(3), 1226, 2005 |
| 9 |
Storage conditions for high-accuracy composition standards of AlGaAs Bertness KA, Roshko A, Asher SE, Perkins CL Journal of Vacuum Science & Technology B, 23(3), 1267, 2005 |
| 10 |
Optimal spectral region for real-time monitoring of sub-ppm levels of water in phosphine by cavity ring-down spectroscopy Lehman SY, Bertness KA, Hodges JT Journal of Crystal Growth, 261(2-3), 225, 2004 |