검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si Intarasiri S, Hallen A, Lu J, Jensen J, Yu LD, Bertilsson K, Wolborski M, Singkarat S, Possnert G Applied Surface Science, 253(11), 4836, 2007 |
| 2 |
The power of using automatic device optimization, based on iterative device simulations, in design of high-performance devices Bertilsson K, Nilsson HE Solid-State Electronics, 48(10-11), 1721, 2004 |
| 3 |
Calculation of lattice heating in SiC RF power devices Bertilsson K, Harris C, Nilsson HE Solid-State Electronics, 48(12), 2103, 2004 |
| 4 |
Full band Monte Carlo study of bulk and surface transport properties in 4H and 6H-SiC Hjelm M, Bertilsson K, Nilsson HE Applied Surface Science, 184(1-4), 194, 2001 |
| 5 |
The effect of different transport models in simulation of high frequency 4H-SiC and 6H-SiC vertical MESFETs Bertilsson K, Nilsson HE, Hjelm M, Petersson CS, Kackell P, Persson C Solid-State Electronics, 45(5), 645, 2001 |