검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
GaN thin film growth on GaAs (001) by CBE and plasma-assisted MBE Kim E, Rusakova I, Berishev I, Tempez A, Bensaoula A Journal of Crystal Growth, 243(3-4), 456, 2002 |
| 2 |
Radio-frequency molecular-beam-epitaxy growth of III nitrides for microsensor applications Starikov D, Boney C, Berishev I, Hernandez IC, Bensaoula A Journal of Vacuum Science & Technology B, 19(4), 1404, 2001 |
| 3 |
Selective area growth of GaN on Si(111) by chemical beam epitaxy Kim E, Tempez A, Medelci N, Berishev I, Bensaoula A Journal of Vacuum Science & Technology A, 18(4), 1130, 2000 |
| 4 |
Diode structures based on p-GaN for optoelectronic applications in the near-ultraviolet range of the spectrum Starikov D, Berishev I, Um JW, Badi N, Medelci N, Tempez A, Bensaoula A Journal of Vacuum Science & Technology B, 18(6), 2620, 2000 |
| 5 |
Metal-insulator-semiconductor Schottky barrier structures fabricated using interfacial BN layers grown on GaN and SiC for optoelectronic device applications Starikov D, Badi N, Berishev I, Medelci N, Kameli O, Sayhi M, Zomorrodian V, Bensaoula A Journal of Vacuum Science & Technology A, 17(4), 1235, 1999 |
| 6 |
Mg doping studies of electron cyclotron resonance molecular beam epitaxy of GaN thin Films Berishev I, Kim E, Fartassi A, Sayhi M, Bensaoula A Journal of Vacuum Science & Technology A, 17(4), 2166, 1999 |
| 7 |
Photoenhanced reactive ion etching of III-V nitrides in BCl3/Cl-2/Ar/N-2 plasmas Tempez A, Medelci N, Badi N, Berishev I, Starikov D, Bensaoula A Journal of Vacuum Science & Technology A, 17(4), 2209, 1999 |
| 8 |
In situ surface composition and structure of InGaN and GaN thin films by time-of-flight mass spectroscopy of recoiled ions Kim E, Berishev I, Bensaoula A, Schultz JA Journal of Vacuum Science & Technology B, 17(3), 1209, 1999 |
| 9 |
High growth rate GaN films using a modified electron cyclotron resonance plasma source Berishev I, Kim E, Bensaoula A Journal of Vacuum Science & Technology A, 16(5), 2791, 1998 |
| 10 |
Surface composition and morphology of chemical beam epitaxy grown GaN thin films Kim E, Berishev I, Bensaoula A, Lee S, Perry SS, Waters K, Schultz JA Journal of Vacuum Science & Technology B, 16(3), 1270, 1998 |