화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors
Li X, Bentley S, McLelland H, Holland MC, Zhou H, Thoms S, Macintyre DS, Thayne IG
Journal of Vacuum Science & Technology B, 28(6), C6L1, 2010
2 Copper-plated 50 nm T-gate fabrication
Oxland RK, Li X, Ferguson S, Bentley S, Thayne IG
Journal of Vacuum Science & Technology B, 28(6), C6P6, 2010