검색결과 : 2건
No. | Article |
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1 |
Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors Li X, Bentley S, McLelland H, Holland MC, Zhou H, Thoms S, Macintyre DS, Thayne IG Journal of Vacuum Science & Technology B, 28(6), C6L1, 2010 |
2 |
Copper-plated 50 nm T-gate fabrication Oxland RK, Li X, Ferguson S, Bentley S, Thayne IG Journal of Vacuum Science & Technology B, 28(6), C6P6, 2010 |