| 1 |
SECONDARY ION MASS SPECTROMETRY SIMS XIII - Proceedings of the Thirteenth International Conference on Secondary Ion Mass Spectrometry and Related Topics Nara-Ken New Public Hall, Nara, Japan, November 11-16, 2001 - Foreword
Benninghoven A
Applied Surface Science, 203, 1, 2003 |
| 2 |
Nonresonant Laser-SNMS and TOF-SIMS analysis of sub-mu m structures
Kollmer F, Bourdos N, Kamischke R, Benninghoven A
Applied Surface Science, 203, 238, 2003 |
| 3 |
TOF-SIMS depth profiling of SIMON
Ge X, Gui D, Chen X, Cha LZ, Brox O, Benninghoven A
Applied Surface Science, 203, 441, 2003 |
| 4 |
Antioxidant segregation and crystallisation at polyester surfaces studied by ToF-SIMS
Medard N, Benninghoven A, Rading D, Licciardello A, Auditore A, Duc TM, Montigaud H, Vernerey F, Poleunis C, Bertrand P
Applied Surface Science, 203, 571, 2003 |
| 5 |
Application of atomic and molecular primary ions for TOF-SIMS analysis of additive containing polymer surfaces
Stapel D, Benninghoven A
Applied Surface Science, 174(3-4), 261, 2001 |
| 6 |
Secondary ion emission from phosphatidic acid sandwich films under atomic and molecular primary ion bombardment
Stapel D, Benninghoven A
Applied Surface Science, 183(3-4), 301, 2001 |
| 7 |
Secondary ion emission from polymethacrylate LB-layers under 0.5-11 keV atomic and molecular primary ion bombardment
Stapel D, Thiemann M, Benninghoven A
Applied Surface Science, 158(3-4), 362, 2000 |
| 8 |
Secondary ion emission from molecular overlayers: Thiols on gold
Rading D, Kersting R, Benninghoven A
Journal of Vacuum Science & Technology A, 18(2), 312, 2000 |
| 9 |
Determination of silicon oxide layer thickness by time-of-flight secondary ion mass spectroscopy
Brox O, Iltgen K, Hellweg S, Benninghoven A
Journal of Vacuum Science & Technology B, 17(5), 2191, 1999 |
| 10 |
Investigation of electron induced damaging of molecular overlayers by imaging static secondary ion mass spectroscopy
Rading D, Liebing V, Becker G, Fuchs H, Benninghoven A
Journal of Vacuum Science & Technology A, 16(6), 3449, 1998 |
