검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Structural and electronic properties of in-situ phosphorous-doped Ge layers grown by reduced pressure-chemical vapour deposition Hartmann JM, Benevent V, Reboud V, Chelnokov A, Guilloy K, Pauc N, Calvo V Thin Solid Films, 602, 13, 2016 |
| 2 |
Epitaxial growth of Si and SiGe at temperatures lower than 500 degrees C with disilane and germane Aubin J, Hartmann JM, Benevent V Thin Solid Films, 602, 36, 2016 |
| 3 |
Potentialities of disilane for the low temperature epitaxy of intrinsic and boron-doped SiGe Hartmann JM, Benevent V, Veillerot M, Halimaoui A Thin Solid Films, 557, 19, 2014 |
| 4 |
Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains Hartmann JM, Benevent V, Barnes JP, Veillerot M, Lafond D, Damlencourt JF, Morvan S, Previtali B, Andrieu F, Loubet N, Dutartre D Solid-State Electronics, 83, 10, 2013 |
| 5 |
A benchmarking of silane, disilane and dichlorosilane for the low temperature growth of group IV layers Hartmann JM, Benevent V, Damlencourt JF, Billon T Thin Solid Films, 520(8), 3185, 2012 |
| 6 |
Influence of induced stress on enrichment kinetic during local Ge condensation of SiGe/SOI mesas Dechoux N, Damlencourt JF, Rivallin P, Brianceau P, Bernasconi S, Benevent V, Vallee C, Barbe JC, Billon T, Bensahel D Thin Solid Films, 518, S92, 2010 |