| 1 |
Polysilicon Gate Etching in High-Density Plasmas - Comparison Between Oxide Hard Mask and Resist Mask
Joubert O, Bell FH
Journal of the Electrochemical Society, 144(5), 1854, 1997 |
| 2 |
X-Ray Photoelectron-Spectroscopy Analyses of Oxide-Masked Polycrystalline SiGe Features Etched in a High-Density Plasma Source
Monget C, Vallon S, Bell FH, Vallier L, Joubert O
Journal of the Electrochemical Society, 144(7), 2455, 1997 |
| 3 |
Polysilicon-Germanium Gate Patterning Studies in a High-Density Plasma Helicon Source
Vallon S, Monget C, Joubert O, Vallier L, Bell FH, Pons M, Regolini JL, Morin C, Sagnes I
Journal of Vacuum Science & Technology A, 15(4), 1874, 1997 |
| 4 |
Polysilicon Gate Etching in High-Density Plasmas .5. Comparison Between Quantitative Chemical-Analysis of Photoresist and Oxide Masked Polysilicon Gates Etched in HBr/Cl-2/O-2 Plasmas
Bell FH, Joubert O
Journal of Vacuum Science & Technology B, 15(1), 88, 1997 |
| 5 |
Analyses of the Chemical Topography of Silicon Dioxide Contact Holes Etched in a High-Density Plasma Source
Joubert O, Czuprynski P, Bell FH, Berruyer P, Blanc R
Journal of Vacuum Science & Technology B, 15(3), 629, 1997 |
| 6 |
Fluorocarbon High-Density Plasmas .7. Investigation of Selective SiO2-to-Si3N4 High-Density Plasma Etch Processes
Zhang Y, Oehrlein GS, Bell FH
Journal of Vacuum Science & Technology A, 14(4), 2127, 1996 |
| 7 |
Fluorocarbon High-Density Plasmas .7. Investigation of Selective SiO2-to-Si3N4 High-Density Plasma Etch Processes (Vol 14, Pg 2127, 1996)
Zhang Y, Oehrlein GS, Bell FH
Journal of Vacuum Science & Technology A, 14(6), 3291, 1996 |
| 8 |
Polysilicon Gate Etching in High-Density Plasmas .1. Process Optimization Using a Chlorine-Based Chemistry
Bell FH, Joubert O, Vallier L
Journal of Vacuum Science & Technology B, 14(1), 96, 1996 |
| 9 |
Polysilicon Gate Etching in High-Density Plasmas .2. X-Ray Photoelectron-Spectroscopy Investigation of Silicon Trenches Etched Using a Chlorine-Based Chemistry
Bell FH, Joubert O, Vallier L
Journal of Vacuum Science & Technology B, 14(3), 1796, 1996 |
| 10 |
Polysilicon Gate Etching in High-Density Plasmas .3. X-Ray Photoelectron-Spectroscopy Investigation of Sidewall Passivation of Silicon Trenches Using an Oxide Hard Mask
Bell FH, Joubert O
Journal of Vacuum Science & Technology B, 14(4), 2493, 1996 |
