검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
AlInAsSb for M-LWIR detectors Sarney WL, Svensson SP, Wang D, Donetsky D, Kipshidze G, Shterengas L, Lin Y, Belenky G Journal of Crystal Growth, 425, 357, 2015 |
| 2 |
Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization Svensson SP, Donetsky D, Wang D, Hier H, Crowne FJ, Belenky G Journal of Crystal Growth, 334(1), 103, 2011 |
| 3 |
Near band edge optical absorption and photoluminescence dynamics in bulk InAsN dilute-nitride materials Wang D, Svensson SP, Shterengas L, Belenky G Journal of Crystal Growth, 312(19), 2705, 2010 |
| 4 |
MOVPE growth of Ga(As)SbN on GaSb substrates Huang JYT, Mawst LJ, Jha S, Kuech TF, Wang D, Shterengas L, Belenky G, Meyer JR, Vurgaftman I Journal of Crystal Growth, 310(23), 4839, 2008 |
| 5 |
Effect of growth interruption on surface recombination velocity in GaInAsSb/AlGaAsSb heterostructures grown by organometallic vapor-phase epitaxy Wang CA, Shiau DA, Donetsky D, Anikeev S, Belenky G, Luryi S Journal of Crystal Growth, 272(1-4), 711, 2004 |