화학공학소재연구정보센터
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No. Article
1 High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications (vol 105, pg 6, 2015)
Golshani N, Derakhshandeh J, Beenakker CIM, Ishihara R
Solid-State Electronics, 119, 50, 2016
2 High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications
Golshani N, Derakhshandeh J, Beenakker CIM, Ishihara R
Solid-State Electronics, 105, 6, 2015
3 Monolithic 3D-ICs with single grain Si thin film transistors
Ishihara R, Derakhshandeh J, Mofrad MRT, Chen T, Golshani N, Beenakker CIM
Solid-State Electronics, 71, 80, 2012
4 Single-grain Si thin-film transistors SPICE model, analog and RF circuit applications
Baiano A, Danesh M, Saputra N, Ishihara R, Long J, Metselaar W, Beenakker CIM, Karaki N, Hiroshima Y, Inoue S
Solid-State Electronics, 52(9), 1345, 2008
5 Microstructure characterization of location-controlled Si-islands crystallized by excimer laser in the mu-Czochralski (grain filter) process
Ishihara R, Danciu D, Tichelaar F, He M, Hiroshima Y, Inoue S, Shimoda T, Metselaar JW, Beenakker CIM
Journal of Crystal Growth, 299(2), 316, 2007
6 Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization
Ishihara R, He M, Rana V, Hiroshima Y, Inoue S, Shimoda T, Metselaar JW, Beenakker CIM
Thin Solid Films, 487(1-2), 97, 2005
7 Advanced excimer-laser crystallization process for single-crystalline thin film transistors
Ishihara R, van der Wilt PC, van Dijk BD, Burtsev A, Metselaar JW, Beenakker CIM
Thin Solid Films, 427(1-2), 77, 2003
8 Phase-field modelling of excimer laser lateral crystallization of silicon thin films
Burtsev A, Apel M, Ishihara R, Beenakker CIM
Thin Solid Films, 427(1-2), 309, 2003
9 Energy density window for location controlled Si grains by dual-beam excimer laser
Burtsev A, Ishihara R, Beenakker CIM
Thin Solid Films, 419(1-2), 199, 2002