화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Magnesium K-Edge NEXAFS Spectroscopy of Chlorophyll alpha in Solution
Witte K, Streeck C, Mantouvalou J, Suchkova SA, Lokstein H, Grotzsch D, Martyanov W, Weser J, Kanngiesser B, Beckhoff B, Stiel H
Journal of Physical Chemistry B, 120(45), 11619, 2016
2 Ion beam analysis of Cu(In,Ga)Se-2 thin film solar cells
Karydas AG, Streeck C, Radovic IB, Kaufmann C, Rissom T, Beckhoff B, Jaksic M, Barradas NP
Applied Surface Science, 356, 631, 2015
3 Approaches to calculate the dielectric function of ZnO around the band gap
Agocs E, Fodor B, Pollakowski B, Beckhoff B, Nutsch A, Jank M, Petrik P
Thin Solid Films, 571, 684, 2014
4 Silicon carbonitride nanolayers - Synthesis and chemical characterization
Hoffmann PS, Fainer NI, Baake O, Kosinova ML, Rumyantsev YM, Trunova VA, Klein A, Pollakowski B, Beckhoff B, Ensinger W
Thin Solid Films, 520(18), 5906, 2012
5 Towards Passivation of Ge(100) Surfaces by Sulfur Adsorption from a (NH4)(2)S Solution: A Combined NEXAFS, STM and LEED Study
Fleischmann C, Sioncke S, Couet S, Schouteden K, Beckhoff B, Muller M, Honicke P, Kolbe M, Van Haesendonck C, Meuris M, Temst K, Vantomme A
Journal of the Electrochemical Society, 158(5), H589, 2011
6 Atomic Layer Deposition of High-kappa Dielectrics on Sulphur-Passivated Germanium
Sioncke S, Lin HC, Brammertz G, Delabie A, Conard T, Franquet A, Meuris M, Struyf H, De Gendt S, Heyns M, Fleischmann C, Temst K, Vantomme A, Muller M, Kolbe M, Beckhoff B, Caymax M
Journal of the Electrochemical Society, 158(7), H687, 2011
7 Self-Affine Surface Roughness of Chemically and Thermally Cleaned Ge(100) Surfaces
Fleischmann C, Houssa M, Sioncke S, Beckhoff B, Muller M, Honicke P, Meuris M, Temst K, Vantomme A
Journal of the Electrochemical Society, 158(10), H1090, 2011
8 Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon
Pepponi G, Giubertoni D, Bersani M, Meirer F, Ingerle D, Steinhauser G, Streli C, Hoenicke P, Beckhoff B
Journal of Vacuum Science & Technology B, 28(1), C1C59, 2010
9 Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques
Giubertoni D, Iacob E, Hoenicke P, Beckhoff B, Pepponi G, Gennaro S, Bersani M
Journal of Vacuum Science & Technology B, 28(1), C1C84, 2010
10 Comparison of reference-free X-ray fluorescence analysis and X-ray reflectometry for thickness determination in the nanometer range
Kolbe M, Beckhoff B, Krumrey M, Ulm G
Applied Surface Science, 252(1), 49, 2005