검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Dry-Etching Damage in III-V Semiconductors Murad S, Rahman M, Johnson N, Thoms S, Beaumont SP, Wilkinson CD Journal of Vacuum Science & Technology B, 14(6), 3658, 1996 |
| 2 |
Effects of O-2 Addition to Sicl4/Sif4 and the Thickness of the Capping Layer on Gate Recess Etching of GaAs-Pseudomorphic High-Electron-Mobility Transistors Murad SK, Cameron NI, Beaumont SP, Wilkinson CD Journal of Vacuum Science & Technology B, 14(6), 3668, 1996 |
| 3 |
Reliable Fabrication of Sub-40 nm Period Gratings Using a Nanolithography System with Interferometric Dynamic Focus Control Cumming DR, Thomas S, Beaumont SP, Weaver JM Journal of Vacuum Science & Technology B, 14(6), 4115, 1996 |
| 4 |
Selective Reactive Ion Etching of InGaAs and InP over InAlAs in Sicl4/Sif4/HBr Plasmas Murad SK, Beaumont SP, Holland M, Wilkinson CD Journal of Vacuum Science & Technology B, 13(6), 2344, 1995 |
| 5 |
Selectively Dry Gate Recessed GaAs Metal-Semiconductor Field-Effect Transistors, High-Electron-Mobility Transistors, and Monolithic Microwave Integrated-Circuits Cameron NI, Ferguson S, Taylor MR, Beaumont SP, Holland M, Tronche C, Soulard M, Ladbrooke PH Journal of Vacuum Science & Technology B, 11(6), 2244, 1993 |