화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Effects of in-situ UV irradiation on the uniformity and optical properties of GaAsBi epi-layers grown by MBE
Beaton DA, Steger M, Christian T, Mascarenhas A
Journal of Crystal Growth, 484, 7, 2018
2 Effects of incident UV light on the surface morphology of MBE grown GaAs
Beaton DA, Sanders C, Alberi K
Journal of Crystal Growth, 413, 76, 2015
3 Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers
Mukherjee K, Beaton DA, Mascarenhas A, Bulsara MT, Fitzgerald EA
Journal of Crystal Growth, 392, 74, 2014
4 Surface reconstructions during growth of GaAs1-xBix alloys by molecular beam epitaxy
Masnadi-Shirazi M, Beaton DA, Lewis RB, Lu XF, Tiedje T
Journal of Crystal Growth, 338(1), 80, 2012
5 Kinetically limited growth of GaAsBi by molecular-beam epitaxy
Ptak AJ, France R, Beaton DA, Alberi K, Simon J, Mascarenhas A, Jiang CS
Journal of Crystal Growth, 338(1), 107, 2012
6 Quaternary bismide alloy ByGa1-yAs1-xBix lattice matched to GaAs
Beaton DA, Ptak AJ, Alberi K, Mascarenhas A
Journal of Crystal Growth, 351(1), 37, 2012
7 Growth of BGaAs by molecular-beam epitaxy and the effects of a bismuth surfactant
Ptak AJ, Beaton DA, Mascarenhas A
Journal of Crystal Growth, 351(1), 122, 2012
8 GaAs1-xBix light emitting diodes
Lewis RB, Beaton DA, Lu XF, Tiedje T
Journal of Crystal Growth, 311(7), 1872, 2009
9 Molecular beam epitaxy growth of the dilute nitride GaAs1-xNx with a helical resonator plasma source
Zangenberg N, Beaton DA, Tiedje T, Tixier S, Adamcyk M, Kumaran R, MacKenzie JA, Nodwell E, Young EC, Sproule G
Journal of Vacuum Science & Technology A, 25(4), 850, 2007