검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Analysis of USJ formation with combined RTA/laser annealing conditions for 28 nm high-k/metal gate CMOS technology using advanced TCAD for process and device simulation Bazizi EM, Zaka A, Benistant F Solid-State Electronics, 83, 61, 2013 |
| 2 |
Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs Bazizi EM, Pakfar A, Fazzini PF, Cristiano F, Tavernier C, Claverie A, Zographos N, Zechner C, Scheid E Thin Solid Films, 518(9), 2427, 2010 |