화학공학소재연구정보센터
검색결과 : 19건
No. Article
1 Electric Heating for Hydrate Prevention in an Arctic, Single-Line Tieback
Turner D, Dubois J, Bass R, Hamilton T, Howlett J, Greaves D
Journal of Chemical and Engineering Data, 60(2), 356, 2015
2 Self-aligned ALD AlOx T-gate insulator for gate leakage current suppression in SiNx-passivated AlGaN/GaN HEMTs
Meyer DJ, Bass R, Katzer DS, Deen DA, Binari SC, Daniels KM, Eddy CR
Solid-State Electronics, 54(10), 1098, 2010
3 Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures
Storm DF, Katzer DS, Deen DA, Bass R, Meyer DJ, Roussos JA, Binari SC, Paskova T, Preble EA, Evans KR
Solid-State Electronics, 54(11), 1470, 2010
4 AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization
Storm DF, Katzer DS, Roussos JA, Mittereder JA, Bass R, Binari SC, Hanser D, Preble EA, Evans KR
Journal of Crystal Growth, 301, 429, 2007
5 Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates
Storm DF, Katzer DS, Roussos JA, Mittereder JA, Bass R, Binari SC, Zhou L, Smith DJ, Hanser D, Preble EA, Evans KR
Journal of Crystal Growth, 305(2), 340, 2007
6 Modulation of the urokinase-type plasminogen activator receptor by the beta 6 integrin subunit
Dalvi N, Thomas GJ, Marshall JF, Morgan M, Bass R, Ellis V, Speight PM, Whawell SA
Biochemical and Biophysical Research Communications, 317(1), 92, 2004
7 Ion beam proximity lithography on spherical substrates with continuously scanned, self-complementary masks
Ruchhoeft P, Wolfe JC, Bass R
Journal of Vacuum Science & Technology B, 20(1), 87, 2002
8 Scattering mask concept for ion-beam nanolithography
Ruchhoeft P, Wolfe JC, Torres JL, Bass R
Journal of Vacuum Science & Technology B, 20(6), 2705, 2002
9 Effects of molecular properties on nanolithography in polymethyl methacrylate
Dobisz EA, Brandow SL, Bass R, Mitterender J
Journal of Vacuum Science & Technology B, 18(1), 107, 2000
10 Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system
Bennett BR, Bracker AS, Magno R, Boos JB, Bass R, Park D
Journal of Vacuum Science & Technology B, 18(3), 1650, 2000