화학공학소재연구정보센터
검색결과 : 15건
No. Article
1 Cellular dislocations patterns in monolike silicon: Influence of stress, time under stress and impurity doping
Oliveira VA, Rocha M, Lantreibecq A, Tsoutsouva MG, Tran-Thi TN, Baruchel J, Camel D
Journal of Crystal Growth, 489, 42, 2018
2 Synchrotron X-ray diffraction imaging studies of dislocations in Kyropoulos grown Ti doped sapphire crystal
Sen G, Caliste TNT, Stelian C, Baruchel J, Barthalay N, Duffar T
Journal of Crystal Growth, 468, 477, 2017
3 Growth undercooling in multi-crystalline pure silicon and in silicon containing light impurities (C and O)
Riberi-Beridot T, Tsoutsouva MG, Regula G, Reinhart G, Perichaud I, Baruchel J, Mangelinck-Noel N
Journal of Crystal Growth, 466, 64, 2017
4 {111} facet growth laws and grain competition during silicon crystallization
Stamelou V, Tsoutsouva MG, Riberi-Beridot T, Reinhart G, Regula G, Baruchel J, Mangelinck-Noel N
Journal of Crystal Growth, 479, 1, 2017
5 On the impact of twinning on the formation of the grain structure of multi-crystalline silicon for photovoltaic applications during directional solidification
Riberi-Beridot T, Mangelinck-Noel N, Tandjaoui A, Reinhart G, Billia B, Lafford T, Baruchel J, Barrallier L
Journal of Crystal Growth, 418, 38, 2015
6 Segregation, precipitation and dislocation generation between seeds in directionally solidified mono-like silicon for photovoltaic applications
Tsoutsouva MG, Oliveira VA, Camel D, Thi TNT, Baruchel J, Marie B, Lafford TA
Journal of Crystal Growth, 401, 397, 2014
7 Investigation of grain boundary grooves at the solid-liquid interface during directional solidification of multi-crystalline silicon: in situ characterization by X-ray imaging
Tandjaoui A, Mangelinck-Noel N, Reinhart G, Billia B, Lafford T, Baruchel J
Journal of Crystal Growth, 377, 203, 2013
8 In situ analysis of the influence of convection during the initial transient of planar solidification
Bogno A, Reinhart G, Buffet A, Thi HN, Billia B, Schenk T, Mangelinck-Noel N, Bergeon N, Baruchel J
Journal of Crystal Growth, 318(1), 1134, 2011
9 In situ and real-time analysis of TGZM phenomena by synchrotron X-ray radiography
Thi HN, Reinhart G, Buffet A, Schenk T, Mangelinck-Noel N, Jung H, Bergeon N, Billia B, Hartwig J, Baruchel J
Journal of Crystal Growth, 310(11), 2906, 2008
10 In situ and real time investigation of directional solidification of Al-Ni alloys by synchrotron imaging
Reinhart G, Nguyen-Thi H, Gastaldi J, Billia B, Mangelinck-Noel N, Schenk T, Hartwig J, Baruchel J
Materials Science Forum, 508, 75, 2006