검색결과 : 29건
No. | Article |
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1 |
O-band InAs/GaAs quantum dot laser monolithically integrated on exact (001) Si substrate Li KS, Liu ZZ, Tang MC, Liao MY, Kim D, Deng HW, Sanchez AM, Beanland R, Martin M, Baron T, Chen SM, Wu J, Seeds A, Liu HY Journal of Crystal Growth, 511, 56, 2019 |
2 |
InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOVPE for the fabrication of InAs FINFET Cerba T, Hauchecorne P, Martin M, Moeyaert J, Alcotte R, Salem B, Eustache E, Bezard P, Chevalier X, Lombard G, Bassani F, David S, Beainy G, Tournie E, Patriarche G, Boutry H, Bawedin M, Baron T Journal of Crystal Growth, 510, 18, 2019 |
3 |
Suppression of self-organized surface nanopatterning on GaSb/InAs multilayers induced by low energy oxygen ion bombardment by using simultaneously sample rotation and oxygen flooding Beainy G, Cerba T, Bassani F, Martin M, Baron T, Barnes JP Applied Surface Science, 441, 218, 2018 |
4 |
Indium-oxide nanoparticles for RRAM devices compatible with CMOS back-end-off-line Perez EAAL, Guenery PV, Abouzaid O, Ayadi K, Brottet S, Moeyaert J, Labau S, Baron T, Blanchard N, Baboux N, Militaru L, Souifi A Solid-State Electronics, 143, 20, 2018 |
5 |
Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition Cerba T, Martin M, Moeyaert J, David S, Rouviere JL, Cerutti L, Alcotte R, Rodriguez JB, Bawedin M, Boutry H, Bassani F, Bogumilowicz Y, Gergaud P, Tournie E, Baron T Thin Solid Films, 645, 5, 2018 |
6 |
Low temperature growth and physical properties of InAs thin films grown on Si, GaAs and In0.53Ga0.47As template Alcotte R, Martin M, Moeyaert J, Gergaud P, David S, Cerba T, Bassani F, Ducroquet F, Bogumilowicz Y, Baron T Thin Solid Films, 645, 119, 2018 |
7 |
Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates Bogumilowicz Y, Hartmann JM, Rochat N, Salaun A, Martin M, Bassani F, Baron T, David S, Bao XY, Sanchez E Journal of Crystal Growth, 453, 180, 2016 |
8 |
Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor-liquid-solid mechanism Brouzet V, Salem B, Periwal P, Alcotte R, Chouchane F, Bassani F, Baron T, Ghibaudo G Solid-State Electronics, 118, 26, 2016 |
9 |
Si-SiC core-shell nanowires Ollivier M, Latu-Romain L, Martin M, David S, Mantoux A, Bano E, Souliere V, Ferro G, Baron T Journal of Crystal Growth, 363, 158, 2013 |
10 |
Patterned growth of high aspect ratio silicon wire arrays at moderate temperature Morin C, Kohen D, Tileli V, Faucherand P, Levis M, Brioude A, Salem B, Baron T, Perraud S Journal of Crystal Growth, 321(1), 151, 2011 |