화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Simulations of radical and ion fluxes on a wafer in a Cl-2/Ar inductively coupled plasma discharge: Confrontation with GaAs and GaN etch experiments
Despiau-Pujo E, Chabert P, Bansropun S, Thenot D, Plouhinec P, Cassette S
Journal of Vacuum Science & Technology B, 28(4), 693, 2010
2 Optimization of an inductively coupled plasma etching process of GalnP/GaAs based material for photonic band gap applications
Combrie S, Bansropun S, Lecomte M, Parillaud O, Cassette S, Benisty H, Nagle J
Journal of Vacuum Science & Technology B, 23(4), 1521, 2005