화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Electrochemical Deposition and Characterization of Ni in Mesoporous Silicon
Dolgiy A, Redko SV, Bandarenka H, Prischepa SL, Yanushkevich K, Nenzi P, Balucani M, Bondarenko V
Journal of the Electrochemical Society, 159(10), D623, 2012
2 Electrochemical deposition of zinc oxide on a thin nickel buffer layer on silicon substrates
Chubenko EB, Klyshko AA, Bondarenko VP, Balucani M
Electrochimica Acta, 56(11), 4031, 2011
3 Model of the drain current saturation in long-gate JFETs and MESFETs
Balucani M, Dobrovolsky VN, Osipov A, Ferrari A
Solid-State Electronics, 49(8), 1251, 2005
4 Formation of intermediate SiCN interlayer during deposition of CNx on a-Si : H or a-SiC : H thin films
Mitu B, Dinescu G, Budianu E, Ferrari A, Balucani M, Lamedica G, Dauscher A, Dinescu M
Applied Surface Science, 184(1-4), 96, 2001
5 Multilayer structures induced by plasma and laser beam treatments on a-Si : H and a-SiC : H thin films
Mitu B, Dinescu G, Dinescu M, Ferrari A, Balucani M, Lamedica G, Dementjev AP, Maslakov KI
Thin Solid Films, 383(1-2), 230, 2001
6 Er-doped oxidised porous silicon waveguides
Balucani M, Bondarenko V, Lamedica G, Ferrari A, Dolgyi L, Vorozov N, Yakovtseva V, Volchek S, Petrovich V, Kazuchits N
Thin Solid Films, 396(1-2), 201, 2001
7 Formation features of deposits during a cathode treatment of porous silicon in aqueous solutions of erbium salts
Petrovich V, Volchek S, Dolgyi L, Yakovtseva V, Bondarenko V, Balucani M, Lamedica G, Ferrari A, Benson T, Arrand H
Journal of the Electrochemical Society, 147(2), 655, 2000
8 Similarity relation for I-V characteristics of FETs with different channel shape
Dobrovolsky VN, Balucani M, Ferrari A
Solid-State Electronics, 44(10), 1865, 2000