화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition
Castan H, Garcia H, Duenas S, Bailon L, Miranda E, Kukli K, Kemell M, Ritala M, Leskela M
Thin Solid Films, 591, 55, 2015
2 2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon
Garcia H, Castan H, Duenas S, Bailon L, Campabadal F, Rafi JM, Zabala M, Beldarrain O, Ohyama H, Takakura K, Tsunoda I
Thin Solid Films, 534, 482, 2013
3 Electrical characterization of high-pressure reactive sputtered ScOx films on silicon
Castan H, Duenas S, Gomez A, Garcia H, Bailon L, Feijoo PC, Toledano-Luque M, del Prado A, San Andres E, Lucia ML
Thin Solid Films, 519(7), 2268, 2011
4 Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors
Duenas S, Castan H, Garcia H, Gomez A, Bailon L, Kukli K, Niinisto J, Ritala M, Leskela M
Journal of Vacuum Science & Technology B, 27(1), 389, 2009
5 Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics
Garcia H, Duenas S, Castan H, Gomez A, Bailon L, Barquero R, Kukli K, Ritala M, Leskela M
Journal of Vacuum Science & Technology B, 27(1), 416, 2009
6 Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors
Duenas S, Castan H, Garcia H, Gomez A, Bailon L, Kukli K, Aarik J, Ritala M, Leskela M
Journal of the Electrochemical Society, 155(11), G241, 2008
7 Electrical properties of atomic-layer-deposited thin gadolinium oxide high-k gate dielectrics
Duenas S, Castan H, Garcia H, Gomez A, Bailon L, Kukli K, Hatanpaa T, Lu J, Ritala M, Leskela M
Journal of the Electrochemical Society, 154(10), G207, 2007
8 Enhanced modelization of ion implant simulation in compound semiconductors
Hernandez-Mangas JM, Enriquez L, Arias J, Jaraiz M, Bailon L
Solid-State Electronics, 46(9), 1315, 2002