검색결과 : 8건
No. | Article |
---|---|
1 |
Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition Castan H, Garcia H, Duenas S, Bailon L, Miranda E, Kukli K, Kemell M, Ritala M, Leskela M Thin Solid Films, 591, 55, 2015 |
2 |
2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon Garcia H, Castan H, Duenas S, Bailon L, Campabadal F, Rafi JM, Zabala M, Beldarrain O, Ohyama H, Takakura K, Tsunoda I Thin Solid Films, 534, 482, 2013 |
3 |
Electrical characterization of high-pressure reactive sputtered ScOx films on silicon Castan H, Duenas S, Gomez A, Garcia H, Bailon L, Feijoo PC, Toledano-Luque M, del Prado A, San Andres E, Lucia ML Thin Solid Films, 519(7), 2268, 2011 |
4 |
Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors Duenas S, Castan H, Garcia H, Gomez A, Bailon L, Kukli K, Niinisto J, Ritala M, Leskela M Journal of Vacuum Science & Technology B, 27(1), 389, 2009 |
5 |
Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics Garcia H, Duenas S, Castan H, Gomez A, Bailon L, Barquero R, Kukli K, Ritala M, Leskela M Journal of Vacuum Science & Technology B, 27(1), 416, 2009 |
6 |
Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors Duenas S, Castan H, Garcia H, Gomez A, Bailon L, Kukli K, Aarik J, Ritala M, Leskela M Journal of the Electrochemical Society, 155(11), G241, 2008 |
7 |
Electrical properties of atomic-layer-deposited thin gadolinium oxide high-k gate dielectrics Duenas S, Castan H, Garcia H, Gomez A, Bailon L, Kukli K, Hatanpaa T, Lu J, Ritala M, Leskela M Journal of the Electrochemical Society, 154(10), G207, 2007 |
8 |
Enhanced modelization of ion implant simulation in compound semiconductors Hernandez-Mangas JM, Enriquez L, Arias J, Jaraiz M, Bailon L Solid-State Electronics, 46(9), 1315, 2002 |