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No. | Article |
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1 |
Improved Inverted Alinga/GaInAs 2-Dimensional Electron-Gas Structures for High-Quality Pseudomorphic Double-Heterojunction Alinas/GaInAs High-Electron-Mobility Transistor Devices Kunzel H, Bach HG, Bottcher J, Heedt C Journal of Vacuum Science & Technology B, 12(5), 2910, 1994 |