검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM Maestro M, Diaz J, Crespo-Yepes A, Gonzalez MB, Martin-Martinez J, Rodriguez R, Nafria M, Campabadal F, Aymerich X Solid-State Electronics, 115, 140, 2016 |
| 2 |
Negative Bias Temperature Instabilities induced in devices with millisecond anneal for ultra-shallow junctions Moras M, Martin-Martinez J, Rodriguez R, Nafria M, Aymerich X, Simoen E Solid-State Electronics, 101, 131, 2014 |
| 3 |
Dielectric Breakdown In Ultra-Thin Hf Based Gate Stacks: A Resistive Switching Phenomenon Rodriguez R, Martin-Martinez J, Crespo-Yepes A, Porti M, Nafria M, Aymerich X Journal of the Electrochemical Society, 159(5), H529, 2012 |
| 4 |
Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs Crespo-Yepes A, Martin-Martinez J, Rothschild A, Rodriguez R, Nafria M, Aymerich X Solid-State Electronics, 65-66, 157, 2011 |
| 5 |
Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors Polspoel W, Vandervorst W, Aguilera L, Porti M, Nafria M, Aymerich X Journal of Vacuum Science & Technology B, 27(1), 356, 2009 |
| 6 |
Development of a conductive atomic force microscope with a logarithmic current-to-voltage converter for the study of metal oxide semiconductor gate dielectrics reliability Aguilera L, Lanza M, Bayerl A, Porti M, Nafria M, Aymerich X Journal of Vacuum Science & Technology B, 27(1), 360, 2009 |
| 7 |
Implanted and irradiated SiO2/Si structure electrical properties at the nanoscale Porti M, Nafria N, Gerardin S, Aymerich X, Cester A, Paccagnella A, Ghidini G Journal of Vacuum Science & Technology B, 27(1), 421, 2009 |
| 8 |
Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics Aguilera L, Polspoel W, Volodin A, Van Haesendonck C, Porti M, Vandervorst W, Nafria M, Aymerich X Journal of Vacuum Science & Technology B, 26(4), 1445, 2008 |
| 9 |
Two-step stress methodology for monitoring the gate oxide degradation in MOS devices Rodriguez R, Miranda E, Nafria M, Sune J, Aymerich X Solid-State Electronics, 45(8), 1317, 2001 |
| 10 |
Breakdown and anti-breakdown events in high-field stressed ultrathin gate oxides Miranda E, Sune J, Rodriguez R, Nafria M, Aymerich X Solid-State Electronics, 45(8), 1327, 2001 |