| 1 |
A study of InGaAs/InAlAs/InP avalanche photodiode
Czuba K, Jurenczyk J, Kaniewski J
Solid-State Electronics, 104, 109, 2015 |
| 2 |
The effect of temporal separation of two Geiger mode avalanche photodiodes and variation of time bin widths on detection probabilities in LADAR system using two Geiger mode avalanche photodiodes
Kim TH, Kong HJ, Jo SE, Oh MS
Current Applied Physics, 13(9), 1975, 2013 |
| 3 |
Characterization of a single-photon detector at 1.55 mu m operated with an active hold-off technique for quantum key distribution
Bouzid A, Park JB, Kim SM, Kwak S, Moon S
Current Applied Physics, 11(3), 903, 2011 |
| 4 |
Systematic experiments for proof of Poisson statistics on direct-detection laser radar using Geiger mode avalanche photodiode
Oh MS, Kong HJ, Kim TH
Current Applied Physics, 10(4), 1041, 2010 |
| 5 |
Electron spectroscopies for simultaneous chemical and electrical analysis
Opila RL
Applied Surface Science, 256(5), 1313, 2009 |
| 6 |
Organometallic vapor phase epitaxy of relaxed InPAs/InP as multiplication layers for avalanche photodiodes
Wang CA, Duerr EK, Donnelly JP, Calawa DR, Chapman DC
Journal of Crystal Growth, 310(7-9), 1583, 2008 |
| 7 |
A circuit model simulation for separate absorption, grading, charge, and multiplication avalanche photodiodes
Banoushi A, Kardan MR, Naeini MA
Solid-State Electronics, 49(6), 871, 2005 |
| 8 |
Hot carrier quasi-ballistic transport in semiconductor devices
Childs PA, Dyke DW
Solid-State Electronics, 48(5), 765, 2004 |
| 9 |
Molecular beam epitaxy growth of antimonide avalanche photodetectors with InAs/AlSb superlattice as the n-type layer
Cheng XC, McGill TC
Journal of Crystal Growth, 208(1-4), 183, 2000 |
