검색결과 : 6건
No. | Article |
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1 |
Formation of atomically flat hydroxyl-terminated diamond (111) surfaces via water vapor annealing Yoshida R, Miyata D, Makino T, Yamasaki S, Matsumoto T, Inokuma T, Tokuda N Applied Surface Science, 458, 222, 2018 |
2 |
Mechanism of anisotropic etching on diamond (111) surfaces by a hydrogen plasma treatment Kuroshima H, Makino T, Yamasaki S, Matsumoto T, Inokuma T, Tokuda N Applied Surface Science, 422, 452, 2017 |
3 |
Conditions for the growth of smooth La0.7Sr0.3MnO3 thin films by pulsed electron ablation Graziosi P, Prezioso M, Gambardella A, Kitts C, Rakshit RK, Riminucci A, Bergenti I, Borgatti F, Pernechele C, Solzi M, Pullini D, Busquets-Mataix D, Dediu VA Thin Solid Films, 534, 83, 2013 |
4 |
Preparation of a spinel Li4Ti5O12 (1 1 1) surface from a rutile TiO2 single crystal Kitta M, Akita T, Maeda Y, Kohyama M Applied Surface Science, 258(7), 3147, 2012 |
5 |
Formation of atomically flat beta-FeSi2/Si(100) interface using ion irradiated substrate Sasase M, Yamamoto H, Kurata H Thin Solid Films, 520(9), 3490, 2012 |
6 |
Polytype identification and mapping in heteroepitaxial growth of 3C on atomically flat 4H-SiC mesas using synchrotron white-beam X-ray topography Dudley M, Vetter WM, Huang XR, Neudeck PG, Powell JA Materials Science Forum, 389-3, 391, 2002 |