검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current Wang Q, Itoh Y, Tsuruoka T, Aono M, He DY, Hasegawa T Solid State Ionics, 328, 30, 2018 |
| 2 |
Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures Tsuruoka T, Valov I, Tappertzhofen S, van den Hurk J, Hasegawa T, Waser R, Aono M Advanced Functional Materials, 25(40), 6374, 2015 |
| 3 |
Direct observation of redox state modulation at carbon/amorphous tantalum oxide thin film hetero-interface probed by means of in situ hard X-ray photoemission spectroscopy Tsuchiya T, Miyoshi S, Yamashita Y, Yoshikawa H, Terabe K, Kobayashi K, Yamaguchi S Solid State Ionics, 253, 110, 2013 |
| 4 |
Emergent Criticality in Complex Turing B-Type Atomic Switch Networks Stieg AZ, Avizienis AV, Sillin HO, Martin-Olmos C, Aono M, Gimzewski JK Advanced Materials, 24(2), 286, 2012 |