검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Characterization of interface defects in ALD Al2O3/p-GaSb MOS capacitors using admittance measurements in range from kHz to GHz Gu SY, Min J, Taur Y, Asbeck PM Solid-State Electronics, 118, 18, 2016 |
| 2 |
Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN Gu S, Chagarov EA, Min J, Madisetti S, Novak S, Oktyabrsky S, Kerr AJ, Kaufman-Osborn T, Kummel AC, Asbeck PM Applied Surface Science, 317, 1022, 2014 |
| 3 |
Self-consistent 1-D Schrodinger-Poisson solver for III-V heterostructures accounting for conduction band non-parabolicity Wang LQ, Asbeck PM, Taur Y Solid-State Electronics, 54(11), 1257, 2010 |
| 4 |
Accurate thermal analysis of GaNHFETs Conway AM, Asbeck PM, Moon JS, Micovic M Solid-State Electronics, 52(5), 637, 2008 |
| 5 |
High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition Chung T, Keogh DM, Ryou JH, Yoo D, Limb J, Lee W, Shen SC, Asbeck PM, Dupuis RD Journal of Crystal Growth, 298, 852, 2007 |
| 6 |
Reduced temperature S-parameter measurements of 400+GHz sub-micron InP DHBTs Li JC, Hussain T, Hitko DA, Royter Y, Fields CH, Milosavljevic I, Thomas S, Rajavel RD, Asbeck PM, Sokolich M Solid-State Electronics, 51(6), 870, 2007 |
| 7 |
Physical modeling of degenerately doped compound semiconductors for high-performance HBT design Li JC, Sokolich M, Hussain T, Asbeck PM Solid-State Electronics, 50(7-8), 1440, 2006 |
| 8 |
A numerical Schrodinger-Poisson solver for radially symmetric nanowire core-shell structures Wang LQ, Wang DL, Asbeck PM Solid-State Electronics, 50(11-12), 1732, 2006 |
| 9 |
GaAs/Ga0.89In0.11N0.02As0.98/GaAs NpN double heterojunction bipolar transistor with low turn-on voltage Welty RJ, Xin HP, Mochizuki K, Tu CW, Asbeck PM Solid-State Electronics, 46(1), 1, 2002 |
| 10 |
Enhancement of base conductivity via the piezoelectric effect in AlGaN/GaN HBTs Asbeck PM, Yu ET, Lau SS, Sun W, Dang X, Shi C Solid-State Electronics, 44(2), 211, 2000 |