검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors Mitrovic B, Parekh A, Ramer J, Merai V, Armour EA, Kadinski L, Gurary A Journal of Crystal Growth, 289(2), 708, 2006 |
| 2 |
Imaging of thickness and compositional fluctuations in InGaN/GaN quantum wells by scanning capacitance microscopy Zhou X, Yu ET, Florescu DI, Ramer JC, Lee DS, Ting SM, Armour EA Journal of Vacuum Science & Technology B, 23(4), 1808, 2005 |
| 3 |
Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors Kadinski L, Merai V, Parekh A, Ramer J, Armour EA, Stall R, Gurary A, Galyukov A, Makarov Y Journal of Crystal Growth, 261(2-3), 175, 2004 |
| 4 |
In situ strain control during MOCVD growth of high-quality InP-based long wavelength distributed Bragg reflectors Hoffman RW, Murphy M, Cruel J, Belousov M, Volf B, Murray C, Armour EA Journal of Crystal Growth, 261(2-3), 301, 2004 |
| 5 |
In situ metrology advances in MOCVD growth of GaN-based materials Belousov M, Volf B, Ramer JC, Armour EA, Gurary A Journal of Crystal Growth, 272(1-4), 94, 2004 |
| 6 |
Sapphire substrate misorientation effects on GaN nucleation layer properties Lu D, Florescu DI, Lee DS, Merai V, Ramer JC, Parekh A, Armour EA Journal of Crystal Growth, 272(1-4), 353, 2004 |
| 7 |
AFM and temperature-dependent photoluminescence studies of the degree of localization induced by quantum-dot like states in InGaN single quantum well light emitting diodes grown by MOCVD on (0001) sapphire Florescu DI, Ramer JC, Merai VN, Parekh A, Lu D, Lee DS, Armour EA Journal of Crystal Growth, 272(1-4), 449, 2004 |