검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Investigation of MOCVD growth parameters on the quality of GaN epitaxial layers Zhang XG, Soderman B, Armour E, Paranjpe A Journal of Crystal Growth, 318(1), 436, 2011 |
| 2 |
Study of carrier localization in InGaN/GaN quantum well blue-light-emitting diode structures Chen JH, Feng ZC, Wang JC, Tsai HL, Yang JR, Parekh A, Armour E, Faniano P Journal of Crystal Growth, 287(2), 354, 2006 |
| 3 |
High-speed InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage Chang PC, Monier C, Baca AG, Li NY, Newman F, Armour E, Hou HQ Solid-State Electronics, 46(4), 581, 2002 |