화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Epitaxial GaN film grown at low temperature by hydrogen-plasma assisted MOCVD
Yam FK, Hassan Z, Ibrahim K, Barmawi M, Sugianto, Budiman M, Arifin P
Materials Science Forum, 517, 9, 2006
2 A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on GaN grown on silicon
Lee YC, Hassan Z, Yam FK, Abdullah MJ, Ibrahim K, Barmawi M, Sugianto, Budiman M, Arifin P
Applied Surface Science, 249(1-4), 91, 2005
3 Optical properties of GaN on Si substrate using plasma-assisted MOCVD technique in the infrared and visible regions
Hashim MR, Oh SA, Ng SS, Hassan Z, Ibrahim K, Barmawi M, Sugianto, Budiman M, Arifin P
Materials Science Forum, 480, 519, 2005
4 YBa2CU3O7-delta thin films deposited by a vertical MOCVD reactor
Sujiono EH, Arifin P, Barmawi M
Materials Chemistry and Physics, 73(1), 47, 2002
5 Growth of GaN film on a-plane sapphire substrates by plasma-assisted MOCVD
Sugianto, Sani RA, Arifin P, Budiman M, Barmawi M
Journal of Crystal Growth, 221, 311, 2000