검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors Kuntman A, Ardali A, Kuntman H, Kacar F Solid-State Electronics, 48(2), 217, 2004 |
| No. | Article |
|---|---|
| 1 |
A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors Kuntman A, Ardali A, Kuntman H, Kacar F Solid-State Electronics, 48(2), 217, 2004 |