검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Antiphase domain annihilation during growth of GaP on Si by molecular beam epitaxy Lin AC, Fejer MM, Harris JS Journal of Crystal Growth, 363, 258, 2013 |
| 2 |
Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers Thanh TN, Robert C, Letoublon A, Cornet C, Quinci T, Giudicelli E, Almosni S, Boudet N, Ponchet A, Kuyyalil J, Danila M, Durand O, Bertru N, Le Corre A Thin Solid Films, 541, 36, 2013 |
| 3 |
Characterization of antiphase domains on GaAs grown on Ge substrates by conductive atomic force microscopy for photovoltaic applications Galiana B, Rey-Stolle I, Beinik I, Algora C, Teichert C, Molina-Aldareguia JM, Tejedor P Solar Energy Materials and Solar Cells, 95(7), 1949, 2011 |
| 4 |
Antiphase boundaries in Ni3Al ordered intermetallic - application of the CBED method Jezierska E, Morniroli JP Materials Chemistry and Physics, 81(2-3), 443, 2003 |
| 5 |
Growth, optical, and electron transport studies across isotype n-GaAs/n-Ge heterojunctions Hudait MK, Krupanidhi SB Journal of Vacuum Science & Technology B, 17(3), 1003, 1999 |