검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
InGaAsP/InP buried-heterostructure laser diodes grown on InP using molecular beam epitaxy and metal-organic chemical vapor deposition Pickrell GW, Zhang HL, Ren HW, Zhang D, Xue Q, Anselm KA, Hwang WY Journal of Vacuum Science & Technology B, 26(3), 1157, 2008 |
| 2 |
Manufacturing of laser diodes grown by molecular beam epitaxy for coarse wavelength division multiplexing systems Anselm KA, Hwang WY, Ren HW, Zhang D, Um J Journal of Vacuum Science & Technology B, 26(3), 1167, 2008 |
| 3 |
Single-crystal GaN/Gd2O3/GaN heterostructure Hong M, Kwo J, Chu SNG, Mannaerts JP, Kortan AR, Ng HM, Cho AY, Anselm KA, Lee CM, Chyi JI Journal of Vacuum Science & Technology B, 20(3), 1274, 2002 |
| 4 |
Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes Hong M, Anselm KA, Kwo J, Ng HM, Baillargeon JN, Kortan AR, Mannaerts JP, Cho AY, Lee CM, Chyi JI, Lay TS Journal of Vacuum Science & Technology B, 18(3), 1453, 2000 |
| 5 |
Resonant-cavity-enhanced avalanche photodiodes grown by molecular beam epitaxy on InP for detection near 1.55 mu m Anselm KA, Nie H, Lenox C, Hansing C, Campbell JC, Streetman BG Journal of Vacuum Science & Technology B, 16(3), 1426, 1998 |
| 6 |
Molecular-Beam Epitaxy Growth of Resonant-Cavity Separate-Absorption-and-Multiplication Avalanche Photodiodes Anselm KA, Murtaza SS, Hu C, Campbell JC, Streetman BG Journal of Vacuum Science & Technology B, 14(3), 2256, 1996 |
| 7 |
Influence of Various Growth-Parameters on the Interface Abruptness of AlAs/GaAs Short-Period Superlattices Smith AR, Chao KJ, Shih CK, Shih YC, Anselm KA, Streetman BG Journal of Vacuum Science & Technology B, 13(4), 1824, 1995 |