화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 (110) and (100) Sidewall-oriented FinFETs: A performance and reliability investigation
Young CD, Akarvardar K, Baykan MO, Matthews K, Ok I, Ngai T, Ang KW, Pater J, Smith CE, Hussain MM, Majhi P, Hobbs C
Solid-State Electronics, 78, 2, 2012
2 Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions
Ang KW, Chin HC, Chui KJ, Li MF, Samudra GS, Yeo YC
Solid-State Electronics, 51(11-12), 1444, 2007
3 Integrated process of photoresist trimming and dielectric hard mask etching for sub-50 nm gate patterning
Bliznetsov V, Kumar R, Lin HZ, Ang KW, Yoo WJ, Du AY
Thin Solid Films, 504(1-2), 117, 2006