화학공학소재연구정보센터
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No. Article
1 Nucleation and initial radius of self-catalyzed III-V nanowires
Dubrovskii VG, Borie S, Dagnet T, Reynes L, Andre Y, Gil E
Journal of Crystal Growth, 459, 194, 2017
2 Spontaneous formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy
Trassoudaine A, Roche E, Bougerol C, Andre Y, Avit G, Monier G, Ramdani MR, Gil E, Castelluci D, Dubrovskii VG
Journal of Crystal Growth, 454, 1, 2016
3 Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy
Reveret F, Andre Y, Gourmala O, Leymarie J, Mihailovic M, Lagarde D, Gil E, Castelluci D, Trassoudaine A
Journal of Crystal Growth, 421, 27, 2015
4 Record high-aspect-ratio GaAs nano-grating lines grown by Hydride Vapor Phase Epitaxy (HVPE)
Gil E, Andre Y, Ramdani MR, Fontaine C, Trassoudaine A, Castelluci D
Journal of Crystal Growth, 380, 93, 2013
5 Complete HVPE experimental investigations: Cartography of SAG GaN towards quasi-substrates or nanostructures
Chelda-Gourmala O, Trassoudaine A, Andre Y, Bouchoule S, Gil E, Tourret J, Castelluci D, Cadoret R
Journal of Crystal Growth, 312(12-13), 1899, 2010
6 A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE)
Tourret J, Gourmala O, Andre Y, Trassoudaine A, Gil E, Castelluci D, Cadoret R
Journal of Crystal Growth, 311(6), 1460, 2009
7 Low-cost high-quality GaN by one-step growth
Tourret J, Gourmala O, Trassoudaine A, Andre Y, Gil E, Castelluci D, Cadoret R
Journal of Crystal Growth, 310(5), 924, 2008
8 Modeling procyanidin self-association processes and understanding their micellar organization: A study by diffusion NMR and molecular mechanics
Pianet I, Andre Y, Ducasse MA, Tarascou I, Lartigue JC, Pinaud N, Fouquet E, Dufourc EJ, Laguerre M
Langmuir, 24(19), 11027, 2008
9 Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers
Andre Y, Trassoudaine A, Tourret J, Cadoret R, Gil E, Castelluci D, Aoude O, Disseix P
Journal of Crystal Growth, 306(1), 86, 2007
10 Selective epitaxial growth of GaAs tips for local spin injector applications
Ramdani RM, Gil E, Andre Y, Trassoudaine A, Castelluci D, Paget D, Rowe ACH, Gerard B
Journal of Crystal Growth, 306(1), 111, 2007