| 1 |
Compliance current and film thickness influence upon multi-level threshold resistive switching of amorphous BaTiO3 (am-BTO) films in Ag/am-BTO/Ag cross point structures
Razi PM, Gangineni RB
Thin Solid Films, 685, 59, 2019 |
| 2 |
Molecular simulation of freestanding amorphous nickel thin films
Dong TQ, Hoang VV, Lauriat G
Thin Solid Films, 545, 584, 2013 |
| 3 |
Copper diffusion barrier performance of amorphous Ta-Ni thin films
Yan H, Tay YY, Jiang YY, Yantara N, Pan JS, Liang MH, Chen Z
Applied Surface Science, 258(7), 3158, 2012 |
| 4 |
Effect of oxygen concentration on the thermal stability of magnetron sputtered amorphous Ta-Ni thin films
Yan H, Santoso RN, Jiang YY, Liang MH, Chen Z
Thin Solid Films, 520(6), 2356, 2012 |
| 5 |
Determination of Li-ion diffusion coefficient in amorphous Zn and ZnO thin films prepared by radio frequency magnetron sputtering
Xie J, Imanishi N, Hirano A, Takeda Y, Yamamoto O, Zhao XB, Cao GS
Thin Solid Films, 519(10), 3373, 2011 |
| 6 |
Structural and optical properties of amorphous oxygenated iron boron nitride thin films produced by reactive co-sputtering
Essafti A, Abouelaoualim A, Fierro JLG, Ech-Chamikh E
Thin Solid Films, 517(15), 4281, 2009 |
| 7 |
Control of liquid crystal alignment by deposition of silicon oxide thin film
Son PK, Park JH, Kim JC, Yoon TH
Thin Solid Films, 515(5), 3102, 2007 |
| 8 |
Differences between surface and bulk refractive indices of a-InxSe1-x
Michalewicz A, Nowak M, Kepinska M
Applied Surface Science, 252(21), 7743, 2006 |
| 9 |
Importance of semiconductor/insulator interface for improving transistor properties of OFET
Yoshida M, Uemura S, Hoshino S, Kodzasa T, Kamata T
Molecular Crystals and Liquid Crystals, 455, 327, 2006 |
| 10 |
Optical properties of amorphous Ba0.7Sr0.3TiO3 thin films obtained by metal organic decomposition technique
Xu ZM, Tanushi Y, Suzuki M, Wakushima K, Yokoyama S
Thin Solid Films, 515(4), 2326, 2006 |
