검색결과 : 10건
No. | Article |
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1 |
Ionic transport in AgI-HgS-As2S3 glasses: Critical percolation and modifier-controlled domains Kassem M, Khaoulani S, Bychkov E Journal of the American Ceramic Society, 101(6), 2287, 2018 |
2 |
X-ray photoelectron spectroscopy analysis of Ge-Sb-Se pulsed laser deposited thin films Baudet E, Cardinaud C, Boidin R, Girard A, Gutwirth J, Nemec P, Nazabal V Journal of the American Ceramic Society, 101(8), 3347, 2018 |
3 |
Amorphous Ge-Sb-Se thin films fabricated by co-sputtering: Properties and photosensitivity Halenkovic T, Gutwirth J, Nemec P, Baudet E, Specht M, Gueguen Y, Sangleboeuf JC, Nazabal V Journal of the American Ceramic Society, 101(7), 2877, 2018 |
4 |
On the thickness dependence of both the optical band gap and reversible photodarkening in amorphous Ge-Se films Kutalek P, Tichy L Thin Solid Films, 619, 336, 2016 |
5 |
Limiting of photo induced changes in amorphous chalcogenide/alumino-silicate nanomultilayers Charnovych S, Nemec P, Nazabal V, Csik A, Allix M, Matzen G, Kokenyesi S Materials Chemistry and Physics, 130(3), 1022, 2011 |
6 |
Investigation of interdiffusion in Sb/As2S3 nano-layered structures by high-resolution X-ray photoelectron spectroscopy Takats V, Miller AC, Jain H, Kovalskiy A, Kokenyesi S Thin Solid Films, 519(10), 3437, 2011 |
7 |
Photocalorimetric measurement of the heat flow during optically and thermally induced solid state reaction between Ag and As33S67 thin films Wagner T, Munzar M, Krbal A, Kasap SO Thermochimica Acta, 432(2), 241, 2005 |
8 |
Thermal diffusivity measurements of semiconducting amorphous GexSe100-x thin films by photothermal deflection technique Mathew A, Ravi J, Madhusoodanan KN, Nair KPR, Rasheed TMA Applied Surface Science, 227(1-4), 410, 2004 |
9 |
Electron-beam-induced patterning of thin film arsenic-based chalcogenides Mietzsch K, Fitzgerald AG Applied Surface Science, 162, 464, 2000 |
10 |
Ionic conductivity of Ag-x(GeSe3)(1-x) (0 <= x <= 0.571) glasses Kawasaki M, Kawamura J, Nakamura Y, Aniya M Solid State Ionics, 123(1-4), 259, 1999 |