검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
The development of a novel three-flow six-wafer reactor of metal-organic chemical vapor deposition system for GaN-based structure Wang HX, Amijima Y, Ishihama Y, Sakai S Journal of Crystal Growth, 235(1-4), 173, 2002 |
| 2 |
Influence of rotation speed of substrate on the growth mechanism of InGaN/GaN multiple quantum wells grown by six-wafer metal organic chemical vapor deposition system Wang HX, Li HD, Amijima Y, Ishihama Y, Sakai S Journal of Crystal Growth, 235(1-4), 183, 2002 |
| 3 |
Influence of carrier gas on the morphology and structure of GaN layers grown on sapphire substrate by six-wafer metal organic chemical vapor deposition system Wang HX, Amijima Y, Ishihama Y, Sakai S Journal of Crystal Growth, 233(4), 681, 2001 |