검색결과 : 100건
No. | Article |
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1 |
Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film Tanaka S, Shojiki K, Uesugi K, Hayashi Y, Miyake H Journal of Crystal Growth, 512, 16, 2019 |
2 |
Influence of trimethylaluminum predoses on the growth morphology, film-substrate interface, and microstructure of MOCVD-grown AlN on (111)Si Lange AP, Mahajan S Journal of Crystal Growth, 511, 106, 2019 |
3 |
Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization Becerra DL, Cohen DA, Mehari S, DenBaars SP, Nakamura S Journal of Crystal Growth, 507, 118, 2019 |
4 |
Structure optimization of 266 nm Al0.53GaN/Al0.75GaN SQW DUV-LD Niass MI, Zang JW, Lu ZQ, Du ZQ, Chen X, Qu YP, Wang F, Liu YH Journal of Crystal Growth, 506, 24, 2019 |
5 |
Metalorganic vapor phase epitaxy of pit-free AlN homoepitaxial films on various semipolar substrates Ichikawa S, Funato M, Kawakami Y Journal of Crystal Growth, 522, 68, 2019 |
6 |
Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling Li KH, Alotaibi HS, Sun HD, Lin RH, Guo WZ, Torres-Castanedo CG, Liu KK, Valdes-Galan S, Li XH Journal of Crystal Growth, 488, 16, 2018 |
7 |
MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality Lemettinen J, Okumura H, Kim I, Kauppinen C, Palacios T, Suihkonen S Journal of Crystal Growth, 487, 12, 2018 |
8 |
MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC Lemettinen J, Okumura H, Kim I, Rudzinski M, Grzonka J, Palacios T, Suihkonen S Journal of Crystal Growth, 487, 50, 2018 |
9 |
Physical vapor transport growth of bulk Al1-xScxN single crystals Dittmar A, Wollweber J, Schmidbauer M, Klimm D, Hartmann C, Bickermann M Journal of Crystal Growth, 500, 74, 2018 |
10 |
Formation of graphene/SiC/AIN multilayers synthesized by pulsed laser deposition on Si(110) substrates Narita S, Meguro K, Takami T, Enta Y, Nakazawa H Journal of Crystal Growth, 460, 27, 2017 |