화학공학소재연구정보센터
검색결과 : 100건
No. Article
1 Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film
Tanaka S, Shojiki K, Uesugi K, Hayashi Y, Miyake H
Journal of Crystal Growth, 512, 16, 2019
2 Influence of trimethylaluminum predoses on the growth morphology, film-substrate interface, and microstructure of MOCVD-grown AlN on (111)Si
Lange AP, Mahajan S
Journal of Crystal Growth, 511, 106, 2019
3 Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization
Becerra DL, Cohen DA, Mehari S, DenBaars SP, Nakamura S
Journal of Crystal Growth, 507, 118, 2019
4 Structure optimization of 266 nm Al0.53GaN/Al0.75GaN SQW DUV-LD
Niass MI, Zang JW, Lu ZQ, Du ZQ, Chen X, Qu YP, Wang F, Liu YH
Journal of Crystal Growth, 506, 24, 2019
5 Metalorganic vapor phase epitaxy of pit-free AlN homoepitaxial films on various semipolar substrates
Ichikawa S, Funato M, Kawakami Y
Journal of Crystal Growth, 522, 68, 2019
6 Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling
Li KH, Alotaibi HS, Sun HD, Lin RH, Guo WZ, Torres-Castanedo CG, Liu KK, Valdes-Galan S, Li XH
Journal of Crystal Growth, 488, 16, 2018
7 MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality
Lemettinen J, Okumura H, Kim I, Kauppinen C, Palacios T, Suihkonen S
Journal of Crystal Growth, 487, 12, 2018
8 MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
Lemettinen J, Okumura H, Kim I, Rudzinski M, Grzonka J, Palacios T, Suihkonen S
Journal of Crystal Growth, 487, 50, 2018
9 Physical vapor transport growth of bulk Al1-xScxN single crystals
Dittmar A, Wollweber J, Schmidbauer M, Klimm D, Hartmann C, Bickermann M
Journal of Crystal Growth, 500, 74, 2018
10 Formation of graphene/SiC/AIN multilayers synthesized by pulsed laser deposition on Si(110) substrates
Narita S, Meguro K, Takami T, Enta Y, Nakazawa H
Journal of Crystal Growth, 460, 27, 2017