검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation Alexewicz A, Alomari M, Maier D, Behmenburg H, Giesen C, Heuken M, Pogany D, Kohn E, Strasser G Solid-State Electronics, 89, 207, 2013 |
| 2 |
Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation Cico K, Gregusova D, Kuzmik J, Jurkovic M, Alexewicz A, Poisson MAD, Pogany D, Strasser G, Delage S, Frohlich K Solid-State Electronics, 67(1), 74, 2012 |
| 3 |
Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN-GaN metal oxide semiconductor high electron mobility transistors on Si substrates Alexewicz A, Ostermaier C, Henkel C, Bethge O, Carlin JF, Lugani L, Grandjean N, Bertagnolli E, Pogany D, Strasser G Thin Solid Films, 520(19), 6230, 2012 |